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awt6631 help3dc tm umts2100 (band 1) lte/wcdma/cdma/td-scdma linear pam data sheet - rev 2.7 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 1: block diagram features ? cdma/evdo, wcdma/hspa, lte and td-scdma compliant ? 3 rd generation help tm technology ? high effciency (r99 waveform): ? 41 % @ p out = +28.25 dbm ? 24 % @ p out = +17 dbm ? simpler calibration with only 2 bias modes ? optimized for smps supply ? low quiescent current: 8 ma ? low leakage current in shutdown mode: <4 a ? internal voltage regulator ? integrated daisy chainable directional couplers with cpl in and cpl out ports ? optimized for a 50 ? system ? low profle miniature surface mount package ? internal dc blocks on in/out rf ports ? 1.8 v control logic ? rohs compliant package, 260 o c msl-3 applications ? wireless handsets and data devices for: ? wcdma/hspa/lte imt-band ? cdma/evdo bandclass 6 ? td-scdma 1.82/2.0 ghz band ? td - lte band 33, 34, and 39 product description the awt6631 pa is designed to provide highly linear output for wcdma, cdma , lte and td-scdma handsets and data devices with high effciency at both high and low power modes. this help3dc tm pa can be used with an external switch mode power supply (smps) to improve its effciency and reduce current consumption further at medium and low output powers. a daisy chainable directional coupler is integrated in the module thus eliminating the need of external couplers. the device is manufactured on an advanced ingap hbt mmic technology offering state-of-the-art reliability, temperature stability, and ruggedness. there are two selectable bias modes that optimize effciency for different output power levels, and a shutdown mode with low leakage current, which increases handset talk and standby time. the self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, effciency, and linearity in a 50 ? system. 1 2 3 4 5 10 9 8 7 6 v bat t rf in v mode2 (n/c) v mode 1 v en cp l ou t gn d cp l in rf ou t v cc bias control voltage regulation cp l gnd at slug (pad ) aw t6631 03/2012
2 figure 2: pinout (x-ray top view) table 1: pin description v bat t rf in v mode2 (n/c) v mode 1 v en 1 2 3 4 56 7 8 9 10 cp l ou t gn d cp l in rf ou t v cc 1 2 3 4 56 7 8 9 10 pin name description 1 v batt battery voltage 2 rf in rf input 3 v mode2 (n/c) no connection 4 v mode1 mode control voltage 1 5 v en pa enable voltage 6 cpl out coupler output 7 gnd ground 8 cpl in coupler input 9 rf out rf output 10 v cc supply voltage data sheet - rev 2.7 03/2012 awt6631
3 electrical characteristics table 2: absolute minimum and maximum ratings stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. parameter min max unit supply voltage (v cc ) 0 +5 v battery voltage (v batt ) 0 +6 v control voltages (v mode1 , v enable ) 0 +3.5 v rf input power (p in ) - +10 dbm storage temperature (t stg ) -40 +150 c the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defned in the electrical specifcations. table 3: operating ranges parameter min typ max units comments supply voltage (v cc ) +0.5 +3.4 +4.35 v p out +28.25 dbm battery voltage (v batt ) +3.1 +3.4 +4.35 v p out +28.25 dbm enable voltage (v enable ) +1.35 0 +1.8 0 +3.1 +0.5 v pa on pa shut down mode control voltage (v mode1 ) +1.35 0 +1.8 0 +3.1 +0.5 v low bias mode high bias mode case temperature (t c ) -30 - +90 c data sheet - rev 2.7 03/2012 awt6631
4 table 4: electrical specifcations - wcdma operation (r99 waveform) (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (2) aclr and effciency measured at 1950 mhz. (3) noise measured at 2110 mhz to 2170 mhz. parameter min typ max units comments 2shudwl)uhtxhfi - mhz umts band 1 5)2wsw3rhu3pd (1) 50+30 50/30 27.45 28.25 17 28.25 17 dbm 3gpp ts 24.121-1, rel 8 table c.11.1.3, for wcdma ewhvw gain 25 12 27 13 30 db hpm, p out = 28.25 dbm lpm, p out = 17 dbm /5dw0+riivhw (2) - - -41 -42 -37 -38 dbc hpm, p out = 28.25 dbm lpm, p out = 17 dbm /5dw0+riivhw (2) - - -55 -55 -48 -48 dbc hpm, p out = 28.25 dbm lpm, p out = 17 dbm 3rhugghg(ilh (2) 37 21 41 24 - - % hpm, p out = 28.25 dbm lpm, p out = 17 dbm 4lhvhwuuhw,t /r%ldv0rgh - 14 ma v mode1 = +1.8 v mode control current - 0.3 0.5 ma through v mode pin, v mode1 = 1.8 v enable current - 0.3 0.5 ma through v enable pin batt current - 2.5 5 ma through v batt pin, v mode1 = +1.8 v /hdndhuuhw - 4 7 a v batt = +4.2 v, v cc = +4.2 v v enable = 0 v, v mode1 = 0 v 1rlvhl5hhlh%dg (3) - - -137 -143 -135 -138 dbm/ hz p out g%p mode1 = 0 v p out g%p mode1 = +1.8 v +duprlv 2f o 3f o , 4f o - - -55 -35 -50 dbc p out g%p input impedance - - vswr rsol)dwru - 20 - db directivity - 20 - db coupler in-out dlvdl,vhuwlr/rvv - - db 0+ 3lwr wgr0rgh sulrv2wsw/hho doovsulrvrwswv - - -70 dbc p out +28.25 dbm ,edgordg5 2wriedgordg5 ssolhvrhudoorshudwlrgl- wlrv /rdgplvpdwvwuhvvlwr permanent degradation of failure - - vswr ssolhvrhuioorshudwludh 3dvhhowd+30/30 - 10 - deg data sheet - rev 2.7 03/2012 awt6631
5 table 5: electrical specifcations - lte operation (rb = 12, start = 0, qpsk) (t c = +25 c, v cc = v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (2) aclr and effciency measured at 1950 mhz. parameter min typ max units comments 2shudwl)uhtxhfi - mhz umts band 1 5)2wsw3rhu3pd (1) lte, hpm lte, lpm 15.2 27.25 27.25 dbm 75hoiru/7( gain 25 12 27 13 30 db hpm, p out = 27.25 dbm lpm, p out g%p aclr e-utra (2) dw0+riivhw - - -38 -38 - - dbc hpm, p out = 27.25 dbm lpm, p out g%p aclr1 utra (2) dw0+riivhw - - - - dbc hpm, p out = 27.25 dbm lpm, p out g%p aclr2 utra (2) dw0+riivhw - - - - dbc hpm, p out = 27.25 dbm lpm, p out g%p 3rhugghg(ilh (2) - - 22 - - % hpm, p out = 27.25 dbm lpm, p out g%p 1rlvhhplvvlrv% - -38 -35 dbm/ mhz 0+5%43. /7(vldohwhuhgdw 0+dw/7(pdsrhu /7(1b3+hplvvlrv - -48 -42 dbm/ n+ 0+ sulrv2wsw/hho doovsulrvrwswv - - dbc p out +27.25 dbm ,edgordg5 2wriedgordg5 ssolhvrhudoorshudwlrgl - wlrv /rdgplvpdwvwuhvvlw no permanent degradation or failure - - vswr ssolhvrhuioorshudwludh data sheet - rev 2.7 03/2012 awt6631
6 table 6: electrical specifcations - cdma operation (cdma2000, rc-1) (t c = +25 c, v cc = v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (iffpvu0+ parameter min typ max units comments operating frequency (f) 1920 - 1980 mhz band class 6 rf output power (pmax) (1) cdma, hpm cdma, lpm 26.7 15.7 27.5 16.5 - - dbm cdma2000, rc-1 gain 25 12 27 13 30 16 db hpm, p out = 27.5 dbm lpm, p out = 16.5 dbm adjacent channel power (2) at +1.25 mhz offset primary channel bw - 1.23 mhz adjacent channel bw = 30 khz - - -50 -53 - - dbc hpm, p out = 27.5 dbm lpm, p out = 16.5 dbm adjacent channel power (2) at +1.98 mhz primary channel bw = 1.23 mhz adjacent channel bw = 30 khz - - -55 -59 - - dbc hpm, p out = 27.5 dbm lpm, p out = 16.5 dbm power-added effciency (2) - - 38 23 - - % hpm, p out = 27.5 dbm lpm, p out = 16.5 dbm spurious output level (all spurious outputs) - - -70 dbc p out +27.5 dbm in-band load vswr < 5:1 out-of-band load vswr < 10:1 applies over all operating condi - tions load mismatch stress with no permanent degradation or failure 8:1 - - vswr applies over full operating range table 7: electrical specifcations - evdo rev. b operation (t c = +25 c, v batt = v cc = +3.4 v, v enable = +1.8 v, 50 ? system, [10001] or [10101] waveform) parameter min typ max unit comments spurious in phs band (1884.5 - 1919.6 mhz) - -45 -41 dbm/300 khz hpm, +18 dbm intermodulation im3 - -23 -13 dbm/mhz hpm, +18 dbm data sheet - rev 2.7 03/2012 awt6631
7 table 8: electrical specifcations - td-lte operation, band 39 (10 mhz qpsk, 12 rb, start = 0) (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = +1.8 v, 50 system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (2) aclr and effciency measured at 1900 mhz. parameter min typ max units comments operating frequency (f) 1900 1880 - - 1920 1920 mhz umts band 33 umts band 39 rf output power (pmax) (1) lte (mpr = 0), hpm lte (mpr = 0), lpm 26 15.5 27 16 27 16 dbm ts 36.101 rel 8 for lte gain 25 12 26.5 13 30 16 db hpm, p out = 27 dbm lpm, p out = 16 dbm lte to lte, e-utra (2) - - -37 -40 -36 -36 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm utra aclr1 (2) - - -38 -40 -36 -36 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm utra aclr2 (2) - - -60 -60 -42 -42 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm power-added effciency (2) - - 34 22 - - % hpm, p out = 27 dbm lpm, p out = 16 dbm quiescent current (icq) low bias mode - 8 - ma through v cc pin harmonics 2f o 3f o , 4f o - - - - -35 -50 dbc p out +27 dbm spurious output level (all spurious outputs) - - -70 dbc p out +27 dbm in-band load vswr < 5:1 out-of-band load vswr < 10:1 applies over all operating condi - tions load mismatch stress with no permanent degradation or failure 8:1 - - vswr applies over full operating range data sheet - rev 2.7 03/2012 awt6631
8 table 9: electrical specifcations - td-lte operation, band 34 (10 mhz qpsk, 12 rb, start = 0) (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = 0 v, 50 system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (2) aclr and effciency measured at 2017.5 mhz. parameter min typ max units comments operating frequency (f) 2010 - 2025 mhz band 34 rf output power (pmax) (1) lte (mpr = 0), hpm lte (mpr = 0), lpm 26 15.5 27 16 27 16 dbm ts 36.101 rel 8 for lte gain 25 12 27 13 30 16 db hpm, p out = 27 dbm lpm, p out = 16 dbm lte to lte, e-utra (2) - - -38 -38 -36 -36 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm utra aclr1 (2) - - -39 -38 -36 -36 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm utra aclr2 (2) - - -62 -60 -42 -42 dbc hpm, p out = 27 dbm lpm, p out = 16 dbm power-added effciency (2) - - 35 23 - - % hpm, p out = 27 dbm lpm, p out = 16 dbm quiescent current (icq) low bias mode - 8 - ma through v cc pin harmonics 2f o 3f o , 4f o - - - - -35 -50 dbc p out +27 dbm spurious output level (all spurious outputs) - - -70 dbc p out +27 dbm in-band load vswr < 5:1 out-of-band load vswr < 10:1 applies over all operating condi - tions load mismatch stress with no permanent degradation or failure 8:1 - - vswr applies over full operating range data sheet - rev 2.7 03/2012 awt6631
9 table 10: electrical specifcations - td-scdma operation (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) for operation at v cc = +3.1 v, p out is derated by 0.8 db. (iffpvu0+ parameter min typ max units comments operating frequency (f) 1880 - 1920 mhz 3gpp ts 25.12 section 5.2a,f rf output power (pmax) (1) td-scdma, hpm td-scdma, lpm 26.2 15.2 27 16 27 16 dbm 3gpp ts 25.62 section 6.2.1 gain 25 12 27 13 30 16 db hpm, p out = 27 dbm lpm, p out = 16 dbm aclr1 at 1.6 mhz offset (2) - - -42 -42 - - dbc hpm, p out = 27 dbm lpm, p out = 16 dbm aclr2 at 3.2 mhz offset (2) - - -55 -55 - - dbc hpm, p out = 27 dbm lpm, p out = 16 dbm power-added effciency (2) - - 36 20 - - % hpm, p out = 27 dbm lpm, p out = 16 dbm quiescent current (icq) low bias mode - 8 13 ma v mode1 = +1.8 v mode control current - 0.3 0.5 ma through v mode pin, v mode1 = +1.8 v enable current - 0.3 0.5 ma through v enable pin, v en = +1.8 v batt current - 2.5 5 ma through v batt pin, v mode1 = +1.8 v leakage current - 4 - a v batt = +4.2 v, v cc = +4.2 v v enable = 0 v, v mode1 = 0 v harmonics 2f o 3f o , 4f o - - - - -35 -50 dbc p out +27 dbm input impedance - - 2:1 vswr load mismatch stress with no permanent degradation or failure 8:1 - - vswr applies over full operating range data sheet - rev 2.7 03/2012 awt6631
10 table 11: electrical specifcations - td-scdma operation (t c = +25 c, v cc = +3.4 v, v batt = +3.4 v, v enable = +1.8 v, 50 ? system) notes: (1) for operation at vcc = +3.1 v, p out is derated by 0.8 db. (2) aclr and effciency measured at 2012.5 mhz. parameter min typ max units comments 2shudwl)uhtxhfi 2010 - 2025 mhz 3gpp ts 25.102 section 5.2a 5)2wsw3rhu3pd (1) td-scdma, hpm td-scdma, lpm 15.2 27 27 dbm 337 hwlr gain 25 12 27 13 30 db hpm, p out = 27 dbm lpm, p out g%p /5dw0+riivhw (2) - - -42 -42 - - dbc hpm, p out = 27 dbm lpm, p out g%p /5dw0+riivhw (2) - - -55 -55 - - dbc hpm, p out = 27 dbm lpm, p out g%p 3rhugghg(ilh (2) - - 20 - - % hpm, p out = 27 dbm lpm, p out g%p 4lhvhwuuhw,t /r%ldv0rgh - 8 13 ma v mode1 = +1.8 v mode control current - 0.3 0.5 ma through v mode pin, v mode1 = +1.8 v enable current - 0.3 0.5 ma through v enable pin, v en = +1.8 v batt current - 2.5 5 ma through v batt pin, v mode1 = +1.8 v /hdndhuuhw - 4 - a v batt = +4.2 v, v cc = +4.2 v v enable = 0 v, v mode1 = 0 v +duprlv 2f o 3f o , 4f o - - - - -35 -50 dbc p out +27 dbm input impedance - - vswr /rdgplvpdwvwuhvvlw no permanent degradation or failure - - vswr ssolhvrhuioorshudwl range data sheet - rev 2.7 03/2012 awt6631
11 application information to ensure proper performance, refer to all related application notes on the anadigics web site: http://www.anadigics.com shutdown mode the power amplifer may be placed in a shutdown mode by applying logic low levels (see operating ranges table) to the v enable and v mode1 voltages. bias modes the power amplifer may be placed in either a low bias mode or a high bias mode by applying the appropriate logic level (see operating ranges table) to v mode1 . the bias control table lists the recommended modes of operation for various applications. v mode2 is not necessary for this pa. two operating modes are available to optimize current consumption. high bias/high power operating mode is for p out levels > 16 dbm. at around 17 dbm output power, the pa should be mode switched to low power mode for lowest quiescent current consumption. figure 3: recommended on/off timing sequence v en v cc note 1 rf in notes 1,2 off sequence referenced after 90 % of rise time referenced before 10 % of fall time on sequenc e on sequence start t_ 0n = 0 t_ 0n +1 s t_ 0n +3 s off sequence start t_ 0f f = 0 t_ 0f f+ 2 st _0 ff +3 s vcontrols venable/vmode(s ) rise/fall max 1 s defined at 10% to 90% of min/max voltage notes: (1) level might be changed after rf is on. (2) rf off defned as p in -30 dbm. (3) switching simultaneously between v mode and v en is not recommended. data sheet - rev 2.7 03/2012 awt6631
12 table 12: bias control (cdma, wcdma and lte) table 13: bias control (td-scdma) application p out levels bias mode v enable v mode1 v cc v b at t td-scdma - high power (high bias mode) > +15 dbm high +1.8 v 0 v 1.5 - 4.35 v > 3.1 v td-scdma - med/low power (low bias mode) ?? +16 dbm low +1.8 v +1.8 v 0.5 - 4.35 v > 3.1v shutdown - shutdown 0 v 0 v 0.5 -4..35 v > 3.1 v application p out levels bias mode v enable v mode1 v cc v b at t high power (high bias mode) > +16 dbm high +1.8 v 0 v 1.5 - 4.35 v > 3.1 v med/low power (low bias mode) ? +17 dbm low +1.8 v +1.8 v 0.5 - 4.35 v > 3.1 v shutdown - shutdown 0 v 0 v 0.5 - 4.35 v > 3.1 v data sheet - rev 2.7 03/2012 awt6631
13 perfromance data: 10 12 14 16 18 20 22 24 26 28 30 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 4: wcdma gain (db) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc figure 4: wcdma gain (db) over temperature (v batt = v cc = 3.4 v) 10 15 20 25 30 0 5 10 15 20 25 30 gain (db) pout (dbm) figure 5: wcdma gain (db) over voltage (tc=25c ) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 5: wcdma gain (db) over voltage (t c = 25 8c) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 efficiency (%) pout (dbm) figure 6: wcdma pae (%) over temperature (vbatt=vcc=3.4v) - 30 3.4cc 25c 3.4vcc 90c 3.4vcc figure 6: wcdma pae (%) over temperature (v batt = v cc = 3.4 v) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 efficiency pout (dbm) figure 5: wcdma pae (%) over voltage (tc=25c ) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc figure 7: wcdma pae (%) over voltage (t c = 25 8c) - 55 - 50 - 45 - 40 - 35 - 30 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 8: wcdma acrl1 (dbc) over temperature (vbatt=vcc=3.4v) - 30c 3.4vcc 25c 3.4vcc 90c 3.4vcc figure 8: wcdma aclr1 (dbc) over temperature (v batt = v cc = 3.4 v) figure 9: wcdma aclr1 (dbc) over voltage (t c = 25 8c) - 55 - 50 - 45 - 40 - 35 - 30 - 25 0 5 10 15 20 25 30 aclr1 (5mhz dbc) pout (dbm) figure 5: wcdma aclr1 (dbc) over voltage (tc=25c ) 25c 3.2vcc 25c 3.4vcc 25c 4.2vcc 25c 3.0vcc data sheet - rev 2.7 03/2012 awt6631
14 figure 10: evaluation board schematic figure 11: evaluation board layout gnd gnd cplout c 4 vbatt vcc c 2 c 3 c 6 c 1 ven r f i n vmode1 r f ou t c pli n gnd gnd vmode2 c3 2.2f ceramic rf in 1 6 7 10 8 5 4 3 v batt v mode1 rf out rf in gnd v cc v en cpl out v cc c1 v batt v mode 1 v en cpl in 29 v mode2 (n/c) c5 2.2 f c2 0.1f gnd at slug cpl in cpl out rf out 33pf data sheet - rev 2.7 03/2012 awt6631
15 help3dc tm the awt6631 power amplifer module is based on anadigics proprietary help3dc? technology. the pa is designed to operate up to 17 dbm in the low power mode, thus eliminating the need for three gain states, while still maintaining low quiescent current and high effciency in low and medium power levels. average weighted effciency can be increased by using an external switch mode power supply (smps) or dc/dc converter to reduce v cc . the directional daisy chainable coupler is integrated within the pa module, therefore there is no need for external couplers. the awt6631 has an integrated voltage regulator, which eliminates the need for an external constant figure 12: typical application circuit voltage source. the pa is turn on/off is controlled by v en pin. a single v mode control logic (v mode1 ) is needed to operate this device. awt6631 requires only two calibration sweeps for system calibration, thus saving calibration time. figure 5 shows one application example on mobile board. c1 and c2 are rf bypass caps and should be placed nearby pin 1 and pin 10. bypass caps c4 and c5 may not be needed. also a t matching topology is recommended at pa rf in and rf out ports to provide matching between input tx filter and duplexer / isolator. v bat t rf in v mo de 2 v mo de 1 v en rf ou t cp l in cp l ou t gn d v cc 1 c2 rf ou t tx filt er pa _r 0 pa _0 n c5 c4 bb g nd a t s lu g rf in 50 gn d gn d gn d gn d gn d to de te ct or c d upl exer v batt smps c6 gn d gn d c3 input matching output matching data sheet - rev 2.7 03/2012 awt6631
16 figure 13: package outline - 10 pin 3 mm x 3 mm x 1 mm surface mount module figure 14: branding specifcation package outline 6631 llllnn yy wwc c pin 1 identifier pa rt number date co de y y=y ear ; ww=w ork week co untr y co de (c c) l ot number data sheet - rev 2.7 03/2012 awt6631
17 figure 15: recommended pcb layout information pcb and stencil design guideline data sheet - rev 2.7 03/2012 awt6631
18 component packaging figure 16: carrier tape pin 1 figure 17: reel data sheet - rev 2.7 03/2012 awt6631
19 ordering information order number temperature range package description component packaging awt6631q7 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module tape and reel, 2500 pieces per reel AWT6631P9 -30 o c to +90 o c rohs compliant 10 pin 3 mm x 3 mm x 1 mm surface mount module partial tape and reel warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. import ant notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifcations contained in advanced product information sheets and preliminary data sheets are subject to change prior to a products formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. data sheet - rev 2.7 03/2012 awt6631

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